APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 1-7 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source voltage 1200 v i d continuous drain current t c = 25c 225 a t c = 80c 180 i dm pulsed drain current 450 v gs gate - source voltage -10/25v v r dson drain - source on resistance 17 m p d power dissipation t c = 25c 1430 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? sic power mosfet - low r ds(on) - high temperature performance ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin emitter for easy drive ? high level of integration ? aln substrate for improved thermal performance ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant phase leg full sic power module v dss = 1200v r dson = 14m typ @ tj = 25c i d = 180a @ tc = 25c downloaded from: http:///
APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 2-7 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v , v ds = 1200v 60 600 a r ds(on) drain C source on resistance v gs = 20v i d = 120a t j = 25c 14 17 m t j = 175c 23 v gs ( th ) gate threshold voltage v gs = v ds , i d = 6ma 1.7 3 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 1000v f = 1mhz 15.4 nf c oss output capacitance 0.72 c rss reverse transfer capacitance 0.12 q g total gate charge v gs = -5/20v v bus = 600v i d = 120a 816 nc q gs gate C source charge 240 q g d gate C drain charge 240 t d(on) turn-on delay time inductive switching v gs = -5/20v ; v bus = 800v i d = 120a ; t j =150c r g = 0.8 10 ns t r rise time 10 t d(off) turn-off delay time 45 t f fall time 30 e on turn on energy inductive switching v gs = -5/+20v v bus = 600v i d = 120a r g = 0.8 t j = 150c 2.6 mj e off turn off energy t j = 150c 1.5 r gint internal gate resistance 0.55 r thjc junction to case thermal resistance 0.105 c/w body diode ratings and characteristics symbol characteristic test conditions min typ max unit v sd diode forward voltage v gs = 0v, i sd = 120a 3.9 v t rr reverse recovery time i sd = 120a ; v gs = -2v v r = 800v ; di f /dt = 600a/s 140 ns q rr reverse recovery charge 690 nc i rr reverse recovery current 12 a downloaded from: http:///
APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 3-7 sic schottky diode rati ngs and characteristics symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rrm reverse leakage current v r =1200v t j = 25c 60 1200 a t j = 175c 3000 i f forward current tc = 125c 60 a v f diode forward voltage i f = 60a t j = 25c 1.5 1.8 v t j = 175c 2.3 q c total capacitive charge i f = 60a, v r = 600v di/dt =3000a/s 720 nc c total capacitance f = 1mhz, v r = 200v 690 pf f = 1mhz, v r = 400v 510 r thjc junction to case thermal resistance 0.19 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque for terminals m6 3 5 n.m to heatsink m6 3 5 wt package weight 350 g package outline (dimensions in mm) downloaded from: http:///
APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 4-7 typical sic mosfet performance curve v gs =15v v gs =18v v gs =20v 0 40 80 120 160 200 240 01234567 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =25c v gs =20v v gs =15v v gs =18v 0 40 80 120 160 200 240 01234567 i ds , drain source current (a) v ds , drain source voltage (v) output characteristics t j =175c 0.75 1 1.25 1.5 1.75 25 50 75 100 125 150 175 t j , junction temperature (c) norm alized r ds(on) vs. tem perature r dson , drain source on resistance v gs =20v i d =120a t j =175c t j =25c t j =25c 0 40 80 120 160 200 240 2 4 6 8 10 12 14 i ds , drain source current (a) v gs , gate source voltage (v) transfert characteristics d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pu lse duration eon eof f 0 1 2 3 4 5 0 40 80 120 160 200 240 sw itching energy (m j) drain current (a) inductive switching energy vs current v gs =-5/20v r g = 0.8 ? v bus = 600v t j = 150c eon eof f 1.0 1.5 2.0 2.5 3.0 3.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 sw itching ene rgy (m j) gate resistance (ohms) inductive switching energy vs rg v gs =-5/20v i d = 120a v bus = 600v t j = 150c downloaded from: http:///
APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 5-7 cis s cr s s cos s 0.1 1 10 100 0 200 400 600 800 1000 c, capacitance (nf) v ds , drain source voltage (v) capacitance vs drain source voltage zcs hard switching zvs 0 100 200 300 400 500 600 700 40 80 120 160 200 240 frequency (khz) i d , drain current (a) operating frequency vs drain current v bus =600v d=50% r g =0.8 ? t j =150c t c =75c v gs =-5v v gs =-2v v gs =0v -240 -200 -160 -120 -80 -40 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =25c v gs =5v v gs =0v v gs =15v v gs =18v v gs =20v -240 -200 -160 -120 -80 -40 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =25c v gs =-5v v gs =-2v v gs =0v -240 -200 -160 -120 -80 -40 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 i ds , drain source current (a) v ds , drain source voltage (v) body diode characteristics t j =175c v gs =5v v gs =0v v gs =15v v gs =18v v gs =20v -240 -200 -160 -120 -80 -40 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 i ds , drain source current (a) v ds , drain source voltage (v) 3rd quadrant characteristics t j =175c -5 0 5 10 15 20 0 120 240 360 480 600 720 840 v gs , gate source voltage (v) gate charge (nc) gate charge vs gate source voltage i d = 120a v ds = 600v downloaded from: http:///
APTSM120AM14CD3AG APTSM120AM14CD3AG C rev 2 july, 2015 www.microsemi.com 6-7 typical sic diode performance curve d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance ( c/w) rectangular pulse duration (seconds) maxim um effective transient thermal im pedance, junction to case vs pu lse duration t j =25c t j =125c t j =175c 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 i f for w ar d cur rent (a) v f forw ard voltage (v) forw ard characteristics t j =25c t j =125c t j =175c 0 0.6 1.2 1.8 2.4 400 600 800 1000 1200 1400 i r reverse current (ma) v r reverse voltage (v) reverse characteristics 0 0.6 1.2 1.8 2.4 3 3.6 4.2 1 10 100 1000 c, capacitance (nf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
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